Improvement of the GaSb/Al2O3 interface using a thin InAs...

Solid-State Electronics 2012 / 12 Vol. 78

Improvement of the GaSb/Al2O3 interface using a thin InAs surface layer

Greene, Andrew, Madisetti, Shailesh, Nagaiah, Padmaja, Yakimov, Michael, Tokranov, Vadim, Moore, Richard, Oktyabrsky, Serge
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Volume:
78
Language:
english
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2012.05.049
Date:
December, 2012
File:
PDF, 1.28 MB
english, 2012
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