Device model for graphene bilayer field-effect transistor

Journal of Applied Physics 2009 Vol. 105; Iss. 10

Device model for graphene bilayer field-effect transistor

Ryzhii, V., Ryzhii, M., Satou, A., Otsuji, T., Kirova, N.
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
105
Year:
2009
Language:
english
DOI:
10.1063/1.3131686
File:
PDF, 444 KB
english, 2009
Conversion to is in progress
Conversion to is failed