Surface passivation of AlN/GaN MOS-HEMTs using ultra-thin...

Electronics Letters 2010 Vol. 46; Iss. 4

Surface passivation of AlN/GaN MOS-HEMTs using ultra-thin Al2O3 formed by thermal oxidation of evaporated aluminium

Taking, S., Banerjee, A., Zhou, H., Li, X., Khokhar, A.Z., Oxland, R., McGregor, I., Bentley, S., Rahman, F., Thayne, I., Dabiran, A.M., Wowchak, A.M., Cui, B., Wasige, E.
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Volume:
46
Year:
2010
Language:
english
Journal:
Electronics Letters
DOI:
10.1049/el.2010.2781
File:
PDF, 208 KB
english, 2010
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