Read-Preferred SRAM Cell With Write-Assist Circuit Using...

IEEE Transactions on Electron Devices 2012 / 10 Vol. 59; Iss. 10

Read-Preferred SRAM Cell With Write-Assist Circuit Using Back-Gate ETSOI Transistors in 22-nm Technology

Yang, Younghwi, Jeong, Hanwool, Yang, Frank, Wang, Joseph, Yeap, Geoffrey, Jung, Seong-Ook
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Volume:
59
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/ted.2012.2205693
Date:
October, 2012
File:
PDF, 783 KB
english, 2012
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