Effect of heterostructure design on current-voltage characteristics in AlxGa1−xN/GaN double-barriers resonant tunneling diode
Boucherit, M., Soltani, A., Rousseau, M., Farvacque, J.-L., DeJaeger, J.-C.Volume:
112
Year:
2012
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4767382
File:
PDF, 1.26 MB
english, 2012