Low-Leakage-Current Enhancement-Mode AlGaN/GaN...

Japanese Journal of Applied Physics 2006 / 3 Vol. 45; Iss. No. 11

Low-Leakage-Current Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistor Using p-Type Gate Contact

Tsuyukuchi, Norio, Nagamatsu, Kentaro, Hirose, Yoshikazu, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
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Volume:
45
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/jjap.45.l319
Date:
March, 2006
File:
PDF, 135 KB
english, 2006
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