Modeling of graphene metal-oxide-semiconductor field-effect...

Modeling of graphene metal-oxide-semiconductor field-effect transistors with gapless large-area graphene channels

Thiele, S. A., Schaefer, J. A., Schwierz, F.
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Volume:
107
Year:
2010
Language:
english
DOI:
10.1063/1.3357398
File:
PDF, 898 KB
english, 2010
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