Capacitance–voltage and current–voltage characteristics for the study of high background doping and conduction mechanisms in GaAsN grown by chemical beam epitaxy
Bouzazi, Boussairi, Kojima, Nobuaki, Ohshita, Yoshio, Yamaguchi, MasafumiVolume:
552
Language:
english
Journal:
Journal of Alloys and Compounds
DOI:
10.1016/j.jallcom.2012.11.007
Date:
March, 2013
File:
PDF, 470 KB
english, 2013