Achieving a low interfacial density of states in atomic...

Applied Physics Letters 2008 Vol. 93; Iss. 20

Achieving a low interfacial density of states in atomic layer deposited Al2O3 on In0.53Ga0.47As

Chiu, H. C., Tung, L. T., Chang, Y. H., Lee, Y. J., Chang, C. C., Kwo, J., Hong, M.
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Volume:
93
Year:
2008
Language:
english
DOI:
10.1063/1.3027476
File:
PDF, 658 KB
english, 2008
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