Channeled ion implantation of as+ in silicon at 300°c

Radiation Effects 1983 / 01 Vol. 77; Iss. 1-2

Channeled ion implantation of as+ in silicon at 300°c

Galkin, G. N., Dravin, V. A., Epifanov, M. S., Khamdokhov, Z. M., Kulikauskas, V. S.
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Volume:
77
Language:
english
Journal:
Radiation Effects
DOI:
10.1080/00337578308224722
Date:
January, 1983
File:
PDF, 456 KB
english, 1983
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