Improvement in output power of a 460 nm InGaN...

Journal of Applied Physics 2010 Vol. 108; Iss. 6

Improvement in output power of a 460 nm InGaN light-emitting diode using staggered quantum well

Liao, Chih-Teng, Tsai, Miao-Chan, Liou, Bo-Ting, Yen, Sheng-Horng, Kuo, Yen-Kuang
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Volume:
108
Year:
2010
Language:
english
DOI:
10.1063/1.3471804
File:
PDF, 510 KB
english, 2010
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