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[IEEE 2010 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2010.12.6-2010.12.8)] 2010 International Electron Devices Meeting - High density 3D integration using CMOS foundry technologies for 28 nm node and beyond
Lin, J.C., Chiou, W.C., Yang, K.F, Chang, H.B., Lin, Y.C., Liao, E.B., Hung, J.P., Lin, Y.L., Tsai, P.H., Shih, Y.C., Wu, T.J., Wu, W.J., Tsai, F.W., Huang, Y.H., Wang, T.Y., Yu, C.L., Chang, C.H., ChYear:
2010
Language:
english
DOI:
10.1109/iedm.2010.5703277
File:
PDF, 2.02 MB
english, 2010