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Effect of Si doping on epitaxial lateral overgrowth of GaN: A spatially resolved micro-Raman scattering study
Kim, Hanul, Rho, Heesuk, Jang, Lee-Woon, Lee, In-HwanVolume:
13
Language:
english
Journal:
Current Applied Physics
DOI:
10.1016/j.cap.2012.07.021
Date:
January, 2013
File:
PDF, 372 KB
english, 2013