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Properties of wetting layer states in low density InAs quantum dot nanostructures emitting at 1.3 μm: Effects of InGaAs capping
Seravalli, L., Bocchi, C., Trevisi, G., Frigeri, P.Volume:
108
Year:
2010
Language:
english
DOI:
10.1063/1.3518049
File:
PDF, 1.82 MB
english, 2010