Fabrication of Enhancement-Mode AlGaN/GaN MISHEMTs by Using...

IEEE Electron Device Letters 2011 Vol. 32; Iss. 10

Fabrication of Enhancement-Mode AlGaN/GaN MISHEMTs by Using Fluorinated as Gate Dielectrics

Chao Chen, Xingzhao Liu, Benlang Tian, Ping Shu, Yuanfu Chen, Wanli Zhang, Hongchuan Jiang, Yanrong Li
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Volume:
32
Year:
2011
Language:
english
DOI:
10.1109/led.2011.2162933
File:
PDF, 136 KB
english, 2011
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