Ground state lasing at 1.30 µm from InAs/GaAs quantum dot...

Nanotechnology 2010 / 03 Vol. 21; Iss. 10

Ground state lasing at 1.30 µm from InAs/GaAs quantum dot lasers grown by metal–organic chemical vapor deposition

Guimard, Denis, Ishida, Mitsuru, Bordel, Damien, Li, Lin, Nishioka, Masao, Tanaka, Yu, Ekawa, Mitsuru, Sudo, Hisao, Yamamoto, Tsuyoshi, Kondo, Hayato, Sugawara, Mitsuru, Arakawa, Yasuhiko
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Volume:
21
Language:
english
Journal:
Nanotechnology
DOI:
10.1088/0957-4484/21/10/105604
Date:
March, 2010
File:
PDF, 958 KB
english, 2010
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