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[IEEE 2012 IEEE Symposium on VLSI Technology - Honolulu, HI, USA (2012.06.12-2012.06.14)] 2012 Symposium on VLSI Technology (VLSIT) - GeSn channel nMOSFETs: Material potential and technological outlook
Gupta, S., Vincent, B., Lin, D. H. C., Gunji, M., Firrincieli, A., Gencarelli, F., Magyari-Kope, B., Yang, B., Douhard, B., Delmotte, J., Franquet, A., Caymax, M., Dekoster, J., Nishi, Y., Saraswat, KYear:
2012
Language:
english
DOI:
10.1109/vlsit.2012.6242478
File:
PDF, 1.04 MB
english, 2012