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[IEEE 2010 IEEE International Conference of Electron Devices and Solid- State Circuits (EDSSC) - Hong Kong (2010.12.15-2010.12.17)] 2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC) - Advanced multi-high-operation-voltage I/O device design for 32nm gate-first HiK MG technology
Xusheng Wu,, Hu, Y, Kusunoki, N, Yang, Z J, Yang, G, Teh, Y, Kirshnan, R, Krishnan, S, Shepard, J, Han, S, Lee, Y, Arnaud, F, Sherony, M, Sudijono, J, Steegen, AYear:
2010
Language:
english
DOI:
10.1109/edssc.2010.5713769
File:
PDF, 1.33 MB
english, 2010