Modeling of Si Etching Under Effects of Plasma Molding in Two-Frequency Capacitively Coupled Plasma in $\hbox{SF}_{6}/\hbox{O}_{2}$ for MEMS Fabrication
Hamaoka, Fukutaro, Yagisawa, Takashi, Makabe, ToshiakiVolume:
35
Language:
english
Journal:
IEEE Transactions on Plasma Science
DOI:
10.1109/tps.2007.901904
Date:
October, 2007
File:
PDF, 896 KB
english, 2007