N-type Schottky barrier source/drain MOSFET using ytterbium silicide
Shiyang Zhu, Jingde Chen, Li, M.-F., Lee, S.J., Singh, J., Zhu, C.X., Du, A., Tung, C.H., Chin, A., Kwong, D.L.Volume:
25
Year:
2004
Language:
english
DOI:
10.1109/led.2004.831582
File:
PDF, 357 KB
english, 2004