An analytical two dimensional subthreshold behavior model to study the nanoscale GCGS DG Si MOSFET including interfacial trap effects
Bentrcia, T., Djeffal, F., Chahdi, M.Volume:
53
Language:
english
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2012.12.005
Date:
April, 2013
File:
PDF, 557 KB
english, 2013