Multiple Memory States in Resistive Switching Devices...

Multiple Memory States in Resistive Switching Devices Through Controlled Size and Orientation of the Conductive Filament

Balatti, S., Larentis, S., Gilmer, D. C., Ielmini, D.
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Volume:
25
Language:
english
Journal:
Advanced Materials
DOI:
10.1002/adma.201204097
Date:
March, 2013
File:
PDF, 810 KB
english, 2013
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