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Multiple Memory States in Resistive Switching Devices Through Controlled Size and Orientation of the Conductive Filament
Balatti, S., Larentis, S., Gilmer, D. C., Ielmini, D.Volume:
25
Language:
english
Journal:
Advanced Materials
DOI:
10.1002/adma.201204097
Date:
March, 2013
File:
PDF, 810 KB
english, 2013