A 4.6 GHz 162 Mb SRAM Design in 22 nm Tri-Gate CMOS...

IEEE Journal of Solid-State Circuits 2013 / 01 Vol. 48; Iss. 1

A 4.6 GHz 162 Mb SRAM Design in 22 nm Tri-Gate CMOS Technology With Integrated Read and Write Assist Circuitry

Karl, Eric, Wang, Yih, Ng, Yong-Gee, Guo, Zheng, Hamzaoglu, Fatih, Meterelliyoz, Mesut, Keane, John, Bhattacharya, Uddalak, Zhang, Kevin, Mistry, Kaizad, Bohr, Mark
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Volume:
48
Language:
english
Journal:
IEEE Journal of Solid-State Circuits
DOI:
10.1109/jssc.2012.2213513
Date:
January, 2013
File:
PDF, 2.45 MB
english, 2013
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