Influence of stress on structural properties of AlGaN/GaN...

Journal of Applied Physics 2013 Vol. 113; Iss. 2

Influence of stress on structural properties of AlGaN/GaN high electron mobility transistor layers grown on 150 mm diameter Si (111) substrate

Liu, H. F., Dolmanan, S. B., Zhang, L., Chua, S. J., Chi, D. Z., Heuken, M., Tripathy, S.
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Volume:
113
Year:
2013
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4774288
File:
PDF, 1.51 MB
english, 2013
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