Surface-Potential-Based Drain Current Model for...

IEEE Transactions on Electron Devices 2012 / 12 Vol. 59; Iss. 12

Surface-Potential-Based Drain Current Model for Long-Channel Junctionless Double-Gate MOSFETs

Chen, Zhuojun, Xiao, Yongguang, Tang, Minghua, Xiong, Ying, Huang, Jianqiang, Li, Jiancheng, Gu, Xiaochen, Zhou, Yichun
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Volume:
59
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/ted.2012.2221164
Date:
December, 2012
File:
PDF, 1.26 MB
english, 2012
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