A 0.4-/spl mu/m 3.3-V 1T1C 4-Mb nonvolatile ferroelectric...

IEEE Journal of Solid-State Circuits 2000 Vol. 35; Iss. 11

A 0.4-/spl mu/m 3.3-V 1T1C 4-Mb nonvolatile ferroelectric RAM with fixed bitline reference voltage scheme and data protection circuit

Byung-Gil Jeon, Mun-Kyu Choi, Yoonjong Song, Seung-Kyu Oh, Yeonbae Chung, Kang-Deog Suh, Kinam Kim
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Volume:
35
Year:
2000
Language:
english
DOI:
10.1109/4.881216
File:
PDF, 254 KB
english, 2000
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