Band alignment of InGaZnO4/Si interface by hard x-ray...

Journal of Applied Physics 2012 Vol. 112; Iss. 3

Band alignment of InGaZnO4/Si interface by hard x-ray photoelectron spectroscopy

Lee, Kyeongmi, Nomura, Kenji, Yanagi, Hiroshi, Kamiya, Toshio, Ikenaga, Eiji, Sugiyama, Takeharu, Kobayashi, Keisuke, Hosono, Hideo
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Volume:
112
Year:
2012
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4744983
File:
PDF, 1.67 MB
english, 2012
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