Impact of Precursor Chemistry and Process Conditions on the Scalability of ALD HfO[sub 2] Gate Dielectrics
Swerts, Johan, Peys, Nick, Nyns, Laura, Delabie, Annelies, Franquet, Alexis, Maes, Jan Willem, Van Elshocht, Sven, De Gendt, StefanVolume:
157
Year:
2010
Language:
english
Journal:
Journal of The Electrochemical Society
DOI:
10.1149/1.3258664
File:
PDF, 189 KB
english, 2010