[IEEE 2012 19th IEEE International Symposium on the...

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[IEEE 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2012) - Singapore, Singapore (2012.07.2-2012.07.6)] 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits - Charge-pumping extraction techniques for hot-carrier induced interface and oxide trap spatial distributions in MOSFETs

Starkov, I., Enichlmair, H., Tyaginov, S., Grasser, T.
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Year:
2012
Language:
english
DOI:
10.1109/ipfa.2012.6306266
File:
PDF, 572 KB
english, 2012
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