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Analytical modeling of stress-induced leakage currents in 5.1–9.6-nm-thick silicon-dioxide films based on two-step inelastic trap-assisted tunneling
Lenski, Markus, Endoh, Tetsuo, Masuoka, FujioVolume:
88
Year:
2000
Language:
english
DOI:
10.1063/1.1312842
File:
PDF, 378 KB
english, 2000