Electrical transport in Bi doped n-type amorphous semiconductors (GeSe3.5)100−xBix at high pressure
K.L. Bhatia, G. Parthasarathy, E.S.R. GopalVolume:
59-60
Year:
1983
Language:
english
DOI:
10.1016/0022-3093(83)90340-x
File:
PDF, 132 KB
english, 1983