Energy placement of the D− dangling-bond transition in a-Si:H from photocapacitance and photocurrent spectroscopies
N.M Johnson, W.B JacksonVolume:
77-78
Year:
1985
Language:
english
DOI:
10.1016/0022-3093(85)90669-6
File:
PDF, 237 KB
english, 1985