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Internal photoemission transient current temperature spectroscopy — a new method for determination of the gao state distribution in a-Si:H
Zi-Min Su, Shao-Qi PengVolume:
77-78
Year:
1985
Language:
english
DOI:
10.1016/0022-3093(85)90674-x
File:
PDF, 145 KB
english, 1985