On the influence of an external D.C. substrate bias on boron and phosphorus doping efficiencies in a-Si:H
F. Alvarez, I. Chambouleyron, A. Gobbi, C. Mendonça, F.L. CastroVolume:
77-78
Year:
1985
Language:
english
DOI:
10.1016/0022-3093(85)90714-8
File:
PDF, 170 KB
english, 1985