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Surface structures and growth mechanism of Ga ON Si(100) determined by LEED and Auger electron spectroscopy
Bernard Bourguignon, Karen L. Carleton, Stephen R. LeoneVolume:
204
Year:
1988
Language:
english
DOI:
10.1016/0039-6028(88)90226-9
File:
PDF, 1.07 MB
english, 1988