Surface structures and growth mechanism of Ga ON Si(100)...

Surface structures and growth mechanism of Ga ON Si(100) determined by LEED and Auger electron spectroscopy

Bernard Bourguignon, Karen L. Carleton, Stephen R. Leone
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Volume:
204
Year:
1988
Language:
english
DOI:
10.1016/0039-6028(88)90226-9
File:
PDF, 1.07 MB
english, 1988
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