![](/img/cover-not-exists.png)
The surface oxidation of alpha-silicon carbide by O2 from 300 to 1373 K
James M Powers, Gabor A SomorjaiVolume:
244
Year:
1991
Language:
english
DOI:
10.1016/0039-6028(91)90167-q
File:
PDF, 1.07 MB
english, 1991