Structure of GaAs heteroepitaxial layer grown on GaP(001) by molecular beam epitaxy
Takashi Nomura, Kenji Murakami, Kenji Ishikawa, Masahiro Miyao, Tsuyoshi Yamaguchi, Akira Sasaki, Minoru HaginoVolume:
242
Year:
1991
Language:
english
DOI:
10.1016/0039-6028(91)90261-p
File:
PDF, 1.04 MB
english, 1991