Chemical dry etching of GaAs(100) by HC1: products, rate,...

Surface Science 1994 Vol. 312; Iss. 1-2

Chemical dry etching of GaAs(100) by HC1: products, rate, and a kinetic model

Chaochin Su, Zi-Guo Dai, Weiang Luo, Dong-Hong Sun, Matthew F. Vernon, Brian E. Bent
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Volume:
312
Year:
1994
Language:
english
DOI:
10.1016/0039-6028(94)90816-8
File:
PDF, 1.23 MB
english, 1994
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