Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
1990 Vol. 45; Iss. 1-4
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Ion channeling analysis of extended-defect annealing in silicon by rapid thermal processes
L. Calcagno, S. Coffa, C. Spinella, E. RiminiVolume:
45
Year:
1990
Language:
english
DOI:
10.1016/0168-583x(90)90871-q
File:
PDF, 666 KB
english, 1990