Peculiarities of buried silicon oxynitride layer synthesis...

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 1991 Vol. 58; Iss. 2

Peculiarities of buried silicon oxynitride layer synthesis by sequential oxygen and nitrogen ion implantation in silicon

A.B. Danilin, K.A. Drakin, V.V. Kukin, A.A. Malinin, V.N. Mordkovich, A.F. Petrov, V.V. Saraykin, O.I. Vyletalina
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Volume:
58
Year:
1991
Language:
english
DOI:
10.1016/0168-583x(91)95586-3
File:
PDF, 282 KB
english, 1991
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