Epitaxial growth of Si:C/Si/SiGe into cavity formed by...

Solid-State Electronics 2009 Vol. 53; Iss. 8

Epitaxial growth of Si:C/Si/SiGe into cavity formed by selective etching of SiGe

Yuji Yamamoto, Klaus Köpke, Günter Weidner, Bernd Tillack
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Volume:
53
Year:
2009
Language:
english
DOI:
10.1016/j.sse.2009.04.028
File:
PDF, 794 KB
english, 2009
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