Selective etching of GaAs over Al0.2Ga0.8As semiconductor...

Selective etching of GaAs over Al0.2Ga0.8As semiconductor in pulsed DC BCl3/SF6 plasmas

J.Y. Shin, K.H. Choi, K.H. Noh, D.K. Park, K.Y. Sohn, G.S. Cho, H.J. Song, J.W. Lee, S.J. Pearton
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Volume:
521
Year:
2012
Language:
english
DOI:
10.1016/j.tsf.2011.10.205
File:
PDF, 879 KB
english, 2012
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