Luminescence anomaly in band gap tailored In0.53(GaxAl1 −...

Luminescence anomaly in band gap tailored In0.53(GaxAl1 − x)0.47As quaternary alloy grown by molecular beam epitaxy

A. Ramam, S.J. Chua
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Volume:
175-176
Year:
1997
Language:
english
DOI:
10.1016/s0022-0248(96)01036-6
File:
PDF, 313 KB
english, 1997
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