Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
2003 Vol. 207; Iss. 4
![](/img/cover-not-exists.png)
Mechanisms of void formation in Ge implanted SiO2 films
E.S. Marstein, A.E. Gunnæs, U. Serincan, S. Jørgensen, A. Olsen, R. Turan, T.G. FinstadVolume:
207
Year:
2003
Language:
english
DOI:
10.1016/s0168-583x(03)00965-0
File:
PDF, 389 KB
english, 2003