Modeling deflection of 450-GeV protons in a bent silicon...

Modeling deflection of 450-GeV protons in a bent silicon crystal

V. P. Koshcheev, N. V. Safin, D. A. Morgun
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Volume:
33
Language:
english
DOI:
10.1134/s106378500708010x
Date:
August, 2007
File:
PDF, 223 KB
english, 2007
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