Nucleation mechanism of GaN nanowires grown on (111) Si by...

Nanotechnology 2009 / 10 Vol. 20; Iss. 41

Nucleation mechanism of GaN nanowires grown on (111) Si by molecular beam epitaxy

Landré, O, Bougerol, C, Renevier, H, Daudin, B
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
20
Language:
english
Journal:
Nanotechnology
DOI:
10.1088/0957-4484/20/41/415602
Date:
October, 2009
File:
PDF, 1.38 MB
english, 2009
Conversion to is in progress
Conversion to is failed