Polarity of GaN nanowires grown by plasma-assisted molecular beam epitaxy on Si(111)
Hestroffer, Karine, Leclere, Cédric, Bougerol, Catherine, Renevier, Hubert, Daudin, BrunoVolume:
84
Language:
english
Journal:
Physical Review B
DOI:
10.1103/PhysRevB.84.245302
Date:
December, 2011
File:
PDF, 496 KB
english, 2011