Crystallization of 640kg mc-silicon ingots under traveling...

Crystallization of 640kg mc-silicon ingots under traveling magnetic field by using a heater-magnet module

Kudla, Ch., Blumenau, A.T., Büllesfeld, F., Dropka, N., Frank-Rotsch, Ch., Kiessling, F., Klein, O., Lange, P., Miller, W., Rehse, U., Sahr, U., Schellhorn, M., Weidemann, G., Ziem, M., Bethin, G., Fo
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Volume:
365
Language:
english
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2012.11.049
Date:
February, 2013
File:
PDF, 1.67 MB
english, 2013
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