Effects of suboxide layers on the electronic properties of Si(100)/SiO2 interfaces: Atomistic multi-scale approach
Kim, Byung-Hyun, Kim, Gyubong, Park, Kihoon, Shin, Mincheol, Chung, Yong-Chae, Lee, Kwang-RyeolVolume:
113
Year:
2013
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4791706
File:
PDF, 1.75 MB
english, 2013