Interfacial and electrical properties of HfO...

Journal of Physics D Applied Physics 2012 / 10 Vol. 45; Iss. 43

Interfacial and electrical properties of HfO 2 gate dielectrics grown on GaAs by atomic layer deposition using different oxidants

Byun, Young-Chul, Mahata, Chandreswar, An, Chee-Hong, Oh, Jungwoo, Choi, Rino, Kim, Hyoungsub
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
45
Language:
english
Journal:
Journal of Physics D: Applied Physics
DOI:
10.1088/0022-3727/45/43/435305
Date:
October, 2012
File:
PDF, 1.19 MB
english, 2012
Conversion to is in progress
Conversion to is failed